Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
WFU4N60 |
Click to view a larger image
| Part Number | WFU4N60 |
| Manufacturer | Winsemi |
| Description | This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been Especially designed to minimize on-state resistance, have a high Rugged avalanche... |
| Features |
■ 4A,600V.RDS(on)(Max 2.5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Isolation Voltage ( VISO = 4000V AC ) ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been Especially designed to minimize on-state resistance, have a high Rugged avalanche characteristics. This devices is specially well Suited for half bridge and full bridge resonant topology line a Electronic lamp ballast. Absolute Maximum Ratings Symbol ... |
| Document |
 WFU4N60 Data Sheet
PDF 548.68KB |
| Distributor | Stock | Price | Buy |
|---|
