WFU4N65S - Winsemi

WFU4N65S Power MOSFET

650V Super-Junction Power MOSFET Features � Ultra low Rdson � Ultra low gate charge (typ. Qg =13nC) � 100% UIS tested � RoHS compliant General Description Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power densi.

Features

� Ultra low Rdson
� Ultra low gate charge (typ. Qg =13nC)
� 100% UIS tested
� RoHS compliant General Description Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Absolute Maximum Ratings Symbol VDSS Drain Source Voltage Continuous Drain Current (Tc=25℃) ID (Tc=100℃) Parameter I DM Drain Current Pulsed 1) VGS Gate to Source Voltage EAS Single Pulse Avalanche Energy 2) I AR Single Pulse Avalanche C.