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This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply , electronic lamp ballasts based on half bridge and UPS. A.
� 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V
� Ultra-low Gate Charge(Typical 15.3nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(150℃)
WFU2N60
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply , electronic lamp ballasts based on half bridge and UPS.
Absolute Maximum.
WFU2N60 - Wisdom technologies
This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been es.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | WFU2N60B |
Winsemi |
Silicon N-Channel MOSFET |
|
| 2 | WFU2N65L |
Winsemi |
Silicon N-Channel MOSFET |
|
| 3 | WFU20N06 |
Winsemi |
Silicon N-Channel MOSFET |
|
| 4 | WFU1N60 |
Winsemi |
Silicon N-Channel MOSFET |
|
| 5 | WFU1N60C |
Winsemi |
Power MOSFET |
|
| 6 | WFU1N60N |
Winsemi |
Silicon N-Channel MOSFET |
|
| 7 | WFU1N80 |
Wisdom technologies |
N-Channel MOSFET |
|
| 8 | WFU430 |
Wisdom technologies |
N-Channel MOSFET |
|
| 9 | WFU4N60 |
Wisdom technologies |
N-Channel MOSFET |
|
| 10 | WFU4N60 |
Winsemi |
Silicon N-Channel MOSFET |
|
| 11 | WFU4N65S |
Winsemi |
Power MOSFET |
|
| 12 | WFU5N50 |
Winsemi |
Silicon N-Channel MOSFET |
|