WFU4N60 |
Part Number | WFU4N60 |
Manufacturer | Wisdom technologies |
Description | HIGH VOLTAGE N-Channel MOSFET WFU4N60/WFD4N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gat... |
Features |
□ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge : 15 nC (Typ.) □ BVDSS=600V,ID=4A □ Lower RDS(on) : 2.5Ω (Max) @VG=10V □ 100% Avalanche Tested
TO‐252
TO‐251
G‐Gate,D‐Drain,S‐Sourse
Absolute Maximum Ratings Tc=25℃ unless other wise noted
Symbol
VDSS
ID
VGS EAS IAR PD TJ,TSTG
TL
Parameter
Drain-Sourse Voltage
Drain Current -continuous (Tc=25℃)
-continuous (Tc=100℃)
Gate-Sourse Voltage
Single Plused Avanche Energy (Note1)
Avalanche Current
(Note2)
Power Dissipation (Tc=25℃)
Operating an... |
Document |
WFU4N60 Data Sheet
PDF 643.70KB |
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