VSP018N03MD - Vanguard Semiconductor

VSP018N03MD Dual N-Channel Advanced Power MOSFET

Features  Dual N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSP018N03MD 30V/30A Dual N-Channel Advanced Power MOSFET V DS R DS(on),Typ @ VGS=10 V R DS(on),Typ @ VGS=4.5 V ID 30 V 17 mΩ 23 mΩ 30 A PDFN5x6 Part ID Package Type .

Features

 Dual N-Channel，5V Logic Level Control
 Enhancement mode
 Low on-resistance RDS(on) @ VGS=4.5 V
 Fast Switching
 100% Avalanche Tested
 Pb-free lead plating; RoHS compliant VSP018N03MD 30V/30A Dual N-Channel Advanced Power MOSFET V DS R DS(on),Typ @ VGS=10 V R DS(on),Typ @ VGS=4.5 V ID 30 V 17 mΩ 23 mΩ 30 A PDFN5x6 Part ID Package Type VSP018N03MD PDFN5x6 Marking 018N03MD Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage ID Continuous drain current@VGS=10V IDM Pulse drain.