VSP011P03MD - Vanguard Semiconductor

VSP011P03MD Dual P-Channel Advanced Power MOSFET

VSP011P03MD -30V/-18A Dual P-Channel Advanced Power MOSFET Features  Dual P-Channel，-5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  100% Avalanche test  Pb-free lead plating; RoHS compliant V DS -30 V R @DS(on),TYP VGS=-10 V 11 mΩ R @DS(on),TYP VGS=-4.5 V 15 mΩ I D -18 A Dual PDFN5x6 Part.

Features

 Dual P-Channel，-5V Logic Level Control
 Enhancement mode
 Very low on-resistance RDS(on) @ VGS=-4.5 V
 Fast Switching
 100% Avalanche test
 Pb-free lead plating; RoHS compliant V DS -30 V R @DS(on),TYP VGS=-10 V 11 mΩ R @DS(on),TYP VGS=-4.5 V 15 mΩ I D -18 A Dual PDFN5x6 Part ID VSP011P03MD Package Type PDFN5x6 Marking 011P03MD Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM Pulse drain cur.