Features N-Channel Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching 100% Avalanche Tested Pb-free lead plating; RoHS compliant VSP010N08MS 80V/75A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5V ID 80 V 7.5 mΩ 8.5 mΩ 75 A PDFN5X6 Part ID VSP010N08MS Package Type PDFN5x6 Marking 0.
N-Channel
Enhancement mode
Very low on-resistance RDS(on) @ VGS=4.5 V
Fast Switching
100% Avalanche Tested
Pb-free lead plating; RoHS compliant
VSP010N08MS
80V/75A N-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5V ID
80 V 7.5 mΩ 8.5 mΩ 75 A
PDFN5X6
Part ID VSP010N08MS
Package Type PDFN5x6
Marking 010N08M
Tape and reel information
3000pcs/Reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current@VGS=10V
IDM EAS
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VSP011P03MD |
Vanguard Semiconductor |
Dual P-Channel Advanced Power MOSFET | |
2 | VSP012N08MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
3 | VSP012N12MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
4 | VSP013N08MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
5 | VSP013N10MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
6 | VSP014N10MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
7 | VSP018N03MD |
Vanguard Semiconductor |
Dual N-Channel Advanced Power MOSFET | |
8 | VSP018N10MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
9 | VSP002N06HS-G |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
10 | VSP002N06MS-G |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
11 | VSP002P02KS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
12 | VSP003N04MS-G |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET |