VSP002N06HS-G - Vanguard Semiconductor

VSP002N06HS-G N-Channel Advanced Power MOSFET

Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=10 V  VitoMOS® Ⅱ Technology  100% Avalanche test  Pb-free lead plating; RoHS compliant VSP002N06HS-G 60V/190A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V ID 60 V 2.1 mΩ 190 A PDFN5060X Part ID VSP002N06HS-G Package Type PDFN5060X Marking 002N06HG Tape and reel inform.

Features

 Enhancement mode
 Low on-resistance RDS(on) @ VGS=10 V
 VitoMOS® Ⅱ Technology
 100% Avalanche test
 Pb-free lead plating; RoHS compliant VSP002N06HS-G 60V/190A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V ID 60 V 2.1 mΩ 190 A PDFN5060X Part ID VSP002N06HS-G Package Type PDFN5060X Marking 002N06HG Tape and reel information 3000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage VGS IS ID IDM IDSM EAS PD Gate-Source voltage Diode continuous forward current Continuous drain current @VGS=1.