VSP013N10MS - Vanguard Semiconductor

VSP013N10MS N-Channel Advanced Power MOSFET

Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche test  Pb-free lead plating; RoHS compliant VSP013N10MS 100V/52A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 100 V 11 mΩ 12 mΩ 52 A PDFN5x6 Part ID VSP013N10MS Package Type PDFN5x6 Marking 01.

Features

 N-Channel
 Enhancement mode
 Very low on-resistance RDS(on) @ VGS=4.5 V
 Fast Switching
 100% Avalanche test
 Pb-free lead plating; RoHS compliant VSP013N10MS 100V/52A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 100 V 11 mΩ 12 mΩ 52 A PDFN5x6 Part ID VSP013N10MS Package Type PDFN5x6 Marking 013N10M Tape and reel information 3000PCS/Reel Maximum ratings, at T j=25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS P.