Features N-Channel Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliant VSD013N10MS 100V/52A N-Channel Advanced Power MOSFET V DS 100 V R @DS(on),TYP VGS=10 V 11 mΩ R @DS(on),TYP VGS=4.5 V 12 mΩ I D 52 A TO-252 Part ID VSD013N10MS Package Type TO-252 Markin.
N-Channel
Enhancement mode
Very low on-resistance RDS(on) @ VGS=4.5 V
Fast Switching
100% Avalanche test
Pb-free lead plating; RoHS compliant
VSD013N10MS
100V/52A N-Channel Advanced Power MOSFET
V DS
100 V
R @DS(on),TYP VGS=10 V
11 mΩ
R @DS(on),TYP VGS=4.5 V
12 mΩ
I D 52 A
TO-252
Part ID VSD013N10MS
Package Type TO-252
Marking 013N10M
Tape and reel information
3000PCS/Reel
Maximum ratings, at T j=25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current@VGS=10V
IDM EA.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VSD013N08MS |
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N-Channel Advanced Power MOSFET | |
2 | VSD010C03MC |
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N+P-Channel Advanced Power MOSFET | |
3 | VSD010N04MS |
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4 | VSD012N03MS |
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N-Channel Advanced Power MOSFET | |
5 | VSD012N06HS |
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N-Channel Advanced Power MOSFET | |
6 | VSD012N06MS |
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N-Channel Advanced Power MOSFET | |
7 | VSD012N08MS |
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N-Channel Advanced Power MOSFET | |
8 | VSD014P04MS |
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P-Channel Advanced Power MOSFET | |
9 | VSD018N03MS |
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N-Channel Advanced Power MOSFET | |
10 | VSD018N08HS |
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N-Channel Advanced Power MOSFET | |
11 | VSD018N08MS |
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N-Channel Advanced Power MOSFET | |
12 | VSD003N06HS |
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