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VSD013N10MS |
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| Part Number | VSD013N10MS |
| Manufacturer | Vanguard Semiconductor |
| Description | Features N-Channel Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliant VSD013N10MS 100V/52A N-Channel Advan... |
| Features |
N-Channel Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliant VSD013N10MS 100V/52A N-Channel Advanced Power MOSFET V DS 100 V R @DS(on),TYP VGS=10 V 11 mΩ R @DS(on),TYP VGS=4.5 V 12 mΩ I D 52 A TO-252 Part ID VSD013N10MS Package Type TO-252 Marking 013N10M Tape and reel information 3000PCS/Reel Maximum ratings, at T j=25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EA... |
| Document |
 VSD013N10MS Data Sheet
PDF 324.21KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
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| 2 | VSD010C03MC |
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| 3 | VSD010N04MS |
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| 4 | VSD012N03MS |
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| 5 | VSD012N06HS |
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