VSD012N08MS - Vanguard Semiconductor

VSD012N08MS N-Channel Advanced Power MOSFET

Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche test  Pb-free lead plating; RoHS compliant VSD012N08MS 80V/60A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 80 V 12 mΩ 13 mΩ 60 A TO-252 Part ID VSD012N08MS Package Type.

Features

 N-Channel，5V Logic Level Control
 Enhancement mode
 Very low on-resistance RDS(on) @ VGS=4.5 V
 Fast Switching
 100% Avalanche test
 Pb-free lead plating; RoHS compliant VSD012N08MS 80V/60A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 80 V 12 mΩ 13 mΩ 60 A TO-252 Part ID VSD012N08MS Package Type TO-252 Marking 012N08M Tape and reel information 2500pcs/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current .