Features P-Channel,-5V Logic Level Control Low on-resistance RDS(on) @ VGS=-4.5 V Fast Switching Enhancement mode 100% Avalanche Tested Pb-free lead plating; RoHS compliant VSD014P04MS -40V/-55A P-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5V ID -40 V 13.5 mΩ 16.5 mΩ -55 A TO-252 Part ID Package Type VS.
P-Channel,-5V Logic Level Control
Low on-resistance RDS(on) @ VGS=-4.5 V
Fast Switching
Enhancement mode
100% Avalanche Tested
Pb-free lead plating; RoHS compliant
VSD014P04MS
-40V/-55A P-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5V ID
-40 V 13.5 mΩ 16.5 mΩ -55 A
TO-252
Part ID
Package Type
VSD014P04MS
TO-252
Marking Tape and reel information
014P04M
2500PCS/Reel
Maximum ratings, at T j =25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous d.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VSD010C03MC |
Vanguard Semiconductor |
N+P-Channel Advanced Power MOSFET | |
2 | VSD010N04MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
3 | VSD012N03MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
4 | VSD012N06HS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
5 | VSD012N06MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
6 | VSD012N08MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
7 | VSD013N08MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
8 | VSD013N10MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
9 | VSD018N03MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
10 | VSD018N08HS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
11 | VSD018N08MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
12 | VSD003N06HS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET |