VS-GT400TH60N - Vishay

VS-GT400TH60N IGBT

Vishay’s IGBT power module provides ultralow conduction loss as well as short circuit ruggedness. It is designed for applications such as UPS and SMPS. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Collector to emitter voltage Gate to emitter voltage Collector current Pulsed collector current Diode continu.

Features

• Low VCE(on) trench IGBT technology
• Low switching losses
• 5 μs short circuit capability
• VCE(on) with positive temperature coefficient
• Maximum junction temperature 175 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper Bonding) technology
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS VCES IC at TC = 80 °C VCE(on) (typical) at IC = 400 A, 25 °C Speed 600 V 400 A 1.60 V 8 kHz to 30 kHz Package Dual INT-A-PAK Circuit configuration Half b.