Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as general inverters and UPS. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Collector to emitter voltage Gate to emitter voltage Collector current Pulsed collector current.
• Low VCE(sat) trench IGBT technology
• 10 μs short circuit capability
• VCE(sat) with positive temperature coefficient
• Maximum junction temperature 175 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• UPS (Uninterruptable Power Supply)
• Inverter for motor drive
• AC and DC servo drive amplifier
DESCRIPTION Vishay’s IGBT power module provides ultra low conduction loss as well a.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VS-GT100TP60N |
Vishay |
Half Bridge IGBT | |
2 | VS-GT100LA120UX |
Vishay |
IGBT | |
3 | VS-GT100NA120UX |
Vishay |
IGBT | |
4 | VS-GT120DA65U |
Vishay |
IGBT | |
5 | VS-GT140DA60U |
Vishay |
IGBT | |
6 | VS-GT175DA120U |
Vishay |
IGBT | |
7 | VS-GT180DA120U |
Vishay |
IGBT | |
8 | VS-GT200TP065N |
Vishay |
Half Bridge - Trench IGBT | |
9 | VS-GT250SA60S |
Vishay |
Insulated Gate Bipolar Transistor | |
10 | VS-GT300FD060N |
Vishay |
DIAP Low Profile 3-Levels Half-Bridge Inverter Stage | |
11 | VS-GT300YH120N |
Vishay |
DIAP Trench IGBT | |
12 | VS-GT400TH120N |
Vishay |
Molding Type Module IGBT |