www.vishay.com VS-GT250SA60S Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A SOT-227 PRIMARY CHARACTERISTICS VCES VCE(on) (typical) at 200 A, 25 °C IC at TC = 90 °C Speed 600 V 1.16 V 250 A DC to 1 kHz Package SOT-227 Circuit configuration Single switch no diode FEATURES • Standard: optimized for minimum saturation .
• Standard: optimized for minimum saturation
voltage and low speed
• Lowest conduction losses available
• Fully isolated package (2500 VAC)
• Very low internal inductance (5 nH typical)
• Industry standard outline
• Designed and qualified for industrial level
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, TIG welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 p.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VS-GT200TP065N |
Vishay |
Half Bridge - Trench IGBT | |
2 | VS-GT100LA120UX |
Vishay |
IGBT | |
3 | VS-GT100NA120UX |
Vishay |
IGBT | |
4 | VS-GT100TP120N |
Vishay |
Half Bridge IGBT | |
5 | VS-GT100TP60N |
Vishay |
Half Bridge IGBT | |
6 | VS-GT120DA65U |
Vishay |
IGBT | |
7 | VS-GT140DA60U |
Vishay |
IGBT | |
8 | VS-GT175DA120U |
Vishay |
IGBT | |
9 | VS-GT180DA120U |
Vishay |
IGBT | |
10 | VS-GT300FD060N |
Vishay |
DIAP Low Profile 3-Levels Half-Bridge Inverter Stage | |
11 | VS-GT300YH120N |
Vishay |
DIAP Trench IGBT | |
12 | VS-GT400TH120N |
Vishay |
Molding Type Module IGBT |