VS-GT200TP065N - Vishay

VS-GT200TP065N Half Bridge - Trench IGBT

www.vishay.com VS-GT200TP065N Vishay Semiconductors INT-A-PAK, Half Bridge - Trench IGBT, 200 A INT-A-PAK PRIMARY CHARACTERISTICS VCES IC (DC) at TC = 80 °C VCE(on) (typical) at IC = 200 A, TJ = 25 °C Speed 650 V 166 A 1.9 V 8 kHz to 30 kHz Package INT-A-PAK Circuit configuration Half bridge FEATURES • Trench IGBT • Very low VCE(on) • 5 μs short c.

Features

• Trench IGBT
• Very low VCE(on)
• 5 μs short circuit capability
• Positive VCE(on) temperature coefficient
• FRED Pt® anti-parallel diode low Qrr and low switching energy
• Industry and standard package
• TJ = 175 °C
• UL pending
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 BENEFITS
• Benchmark efficiency for UPS and welding application
• Rugged transient performance
• Direct mounting on heatsink
• Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current Pulsed col.