VS-GT175DA120U - Vishay

VS-GT175DA120U IGBT

www.vishay.com VS-GT175DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 175 A SOT-227 PRODUCT SUMMARY VCES IC(DC) VCE(on) typical at 100 A, 25 °C IF(DC) Speed 1200 V 175 A at 90 °C (1) 1.73 V 32 A at 90 °C 8 kHz to 30 kHz Package SOT-227 Circuit Single switch diode Note (1) Maximum collector current admitted is 100 A, .

Features

• Trench IGBT technology with positive temperature coefficient
• Square RBSOA
• 10 μs short circuit capability
• HEXFRED® antiparallel diodes with ultrasoft reverse recovery
• TJ maximum = 150 °C
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 BENEFITS
• Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-i.