VS-GT200TP065N |
Part Number | VS-GT200TP065N |
Manufacturer | Vishay (https://www.vishay.com/) |
Description | www.vishay.com VS-GT200TP065N Vishay Semiconductors INT-A-PAK, Half Bridge - Trench IGBT, 200 A INT-A-PAK PRIMARY CHARACTERISTICS VCES IC (DC) at TC = 80 °C VCE(on) (typical) at IC = 200 A, TJ = ... |
Features |
• Trench IGBT • Very low VCE(on) • 5 μs short circuit capability • Positive VCE(on) temperature coefficient • FRED Pt® anti-parallel diode low Qrr and low switching energy • Industry and standard package • TJ = 175 °C • UL pending • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 BENEFITS • Benchmark efficiency for UPS and welding application • Rugged transient performance • Direct mounting on heatsink • Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current Pulsed col... |
Document |
VS-GT200TP065N Data Sheet
PDF 143.09KB |
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