VS-GT200TP065N Vishay Half Bridge - Trench IGBT Datasheet, en stock, prix

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VS-GT200TP065N

Vishay
VS-GT200TP065N
VS-GT200TP065N VS-GT200TP065N
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Part Number VS-GT200TP065N
Manufacturer Vishay (https://www.vishay.com/)
Description www.vishay.com VS-GT200TP065N Vishay Semiconductors INT-A-PAK, Half Bridge - Trench IGBT, 200 A INT-A-PAK PRIMARY CHARACTERISTICS VCES IC (DC) at TC = 80 °C VCE(on) (typical) at IC = 200 A, TJ = ...
Features
• Trench IGBT
• Very low VCE(on)
• 5 μs short circuit capability
• Positive VCE(on) temperature coefficient
• FRED Pt® anti-parallel diode low Qrr and low switching energy
• Industry and standard package
• TJ = 175 °C
• UL pending
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 BENEFITS
• Benchmark efficiency for UPS and welding application
• Rugged transient performance
• Direct mounting on heatsink
• Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current Pulsed col...

Document Datasheet VS-GT200TP065N Data Sheet
PDF 143.09KB
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