www.DataSheet.co.kr New Product VFT3080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A TMBS ® ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 3 • Compliant to RoH.
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
3
• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
1 VFT3080S
PIN 1 PIN 2
2
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PIN 3
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 30 A TJ max. 30 A 80 V 200 A 0.73 V 150 °C
MECHANIC.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VFT3080C |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier | |
2 | VFT3080C-E3 |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier | |
3 | VFT3080S-E3 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
4 | VFT30-28 |
Advanced Semiconductor |
VHF POWER MOSFET | |
5 | VFT30-50 |
Advanced Semiconductor |
VHF POWER MOSFET N-Channel Enhancement Mode | |
6 | VFT300-28 |
Advanced Semiconductor |
VHF POWER MOSFET Silicon N-Channel Enhancement Mode | |
7 | VFT300-50 |
Advanced Semiconductor |
VHF POWER MOSFET N-Channel Enhancement Mode | |
8 | VFT3045BP |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
9 | VFT3045C |
Vishay Siliconix |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
10 | VFT3045CBP |
Vishay |
Trench MOS Barrier Schottky Rectifier Rectifier | |
11 | VFT3060C |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
12 | VFT3060C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |