VT3080S-E3, VFT3080S-E3, VBT3080S-E3, VIT3080S-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A TO-220AB TMBS ® ITO-220AB VT3080S 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K 123 VFT3080S PIN 1 PIN 2 PIN 3 TO-262AA K FEATURES • Trench MOS Schottky technology • Low forward v.
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package)
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
A NC
VBT3080S
NC K A HEATSINK
VI.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VFT3080S |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
2 | VFT3080C |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier | |
3 | VFT3080C-E3 |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier | |
4 | VFT30-28 |
Advanced Semiconductor |
VHF POWER MOSFET | |
5 | VFT30-50 |
Advanced Semiconductor |
VHF POWER MOSFET N-Channel Enhancement Mode | |
6 | VFT300-28 |
Advanced Semiconductor |
VHF POWER MOSFET Silicon N-Channel Enhancement Mode | |
7 | VFT300-50 |
Advanced Semiconductor |
VHF POWER MOSFET N-Channel Enhancement Mode | |
8 | VFT3045BP |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
9 | VFT3045C |
Vishay Siliconix |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
10 | VFT3045CBP |
Vishay |
Trench MOS Barrier Schottky Rectifier Rectifier | |
11 | VFT3060C |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
12 | VFT3060C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |