The VFT300-28 is Designed for Wideband High Power VHF Amplifier Applications operating up to 250 MHz. PACKAGE STYLE .400 BAL FLG (D) A .080x45° B FULL R FEATURES: • PG = 14 dB Typical at 175 MHz • η D = 55% Typ. at POUT = 300 Watts • Omnigold™ Metalization System E .1925 D C D D (4X).060 R M G H I F G N G Sources are connected to flange L J K MAX.
• PG = 14 dB Typical at 175 MHz
• η D = 55% Typ. at POUT = 300 Watts
• Omnigold™ Metalization System
E .1925 D C
D
D
(4X).060 R
M
G
H I
F G N
G
Sources are connected to flange
L J K
MAXIMUM RATINGS
ID V(BR)DSS VDGR VGS PDISS TJ T STG θ JC
O
16 A 65 V 65 V ± 40 V 300 W @ TC = 25 C -65 C to +200 C -65 OC to +150 OC 0.6 OC/W
TC = 25 OC
O O
DIM A B C D E F G H I J K L M N
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59 .210 / 5.33 .125 / 3.18 .380 / 9.65 .580 / 14.73 .435 / 11.05 1.090 / 27.69 1.335 / 33.91 .003 / 0.08 .060 / 1.52 .100 / 2.54 .395 / 10.03 .850 / 21.59
.230 / 5..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VFT300-50 |
Advanced Semiconductor |
VHF POWER MOSFET N-Channel Enhancement Mode | |
2 | VFT30-28 |
Advanced Semiconductor |
VHF POWER MOSFET | |
3 | VFT30-50 |
Advanced Semiconductor |
VHF POWER MOSFET N-Channel Enhancement Mode | |
4 | VFT3045BP |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
5 | VFT3045C |
Vishay Siliconix |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
6 | VFT3045CBP |
Vishay |
Trench MOS Barrier Schottky Rectifier Rectifier | |
7 | VFT3060C |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
8 | VFT3060C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
9 | VFT3060G |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
10 | VFT3060G-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
11 | VFT3080C |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier | |
12 | VFT3080C-E3 |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier |