The VFT300-50 is Designed for AM/FM Power Amplifier Applications up to 250 MHz. PACKAGE STYLE .400 BAL FLG(D) .080x45° A B FULL R D E .1925 D C D (4X).060 R M FEATURES: • PG = 15 dB Typ. at 300W/ 175 MHz • 5:1 Load VSWR Capability • Omnigold™ Metalization System DIM G H I F G N G Source connected to flange J K MINIMUM inches / mm L MAXIMUM inch.
• PG = 15 dB Typ. at 300W/ 175 MHz
• 5:1 Load VSWR Capability
• Omnigold™ Metalization System
DIM
G
H I
F G N
G
Source connected to flange
J K MINIMUM
inches / mm
L
MAXIMUM
inches / mm
MAXIMUM RATINGS
ID VDSS VGS PDISS TJ T STG θ JC
O O
A B C D
.220 / 5.59 .210 / 5.33 .125 / 3.18 .380 / 9.65 .580 / 14.73 .435 / 11.05 1.090 / 27.69 1.335 / 33.91 .003 / 0.08 .060 / 1.52 .100 / 2.54 .395 / 10.03 .850 / 21.59
.230 / 5.84
40 A 125 V ± 40 V 500 W @ TC = 25 C -65 C to +150 C -65 C to +200 C 0.35 OC/W
O O O
.390 / 9.91 .620 / 15.75 1.105 / 28.07 1.345 / 34.16 .007 / 0.18 .070 / 1.78 .115.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VFT300-28 |
Advanced Semiconductor |
VHF POWER MOSFET Silicon N-Channel Enhancement Mode | |
2 | VFT30-28 |
Advanced Semiconductor |
VHF POWER MOSFET | |
3 | VFT30-50 |
Advanced Semiconductor |
VHF POWER MOSFET N-Channel Enhancement Mode | |
4 | VFT3045BP |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
5 | VFT3045C |
Vishay Siliconix |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
6 | VFT3045CBP |
Vishay |
Trench MOS Barrier Schottky Rectifier Rectifier | |
7 | VFT3060C |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
8 | VFT3060C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
9 | VFT3060G |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
10 | VFT3060G-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
11 | VFT3080C |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier | |
12 | VFT3080C-E3 |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier |