The VFT30-50 is Designed for General Purpose Class B Power Amplifier Applications up to 250 MHz. PACKAGE STYLE .380 4L FLG B .112 x 45° A FEATURES: • PG = 16 dB Typ. at 30 W /175 MHz • η D = 60% Typ. at 30 W /175 MHz • Omnigold™ Metalization System F S G C D E D S Ø.125 NOM. FULL R J .125 MAXIMUM RATINGS ID V(BR)DSS VDGR VGS PDISS TJ T STG θ JC O I G.
• PG = 16 dB Typ. at 30 W /175 MHz
• η D = 60% Typ. at 30 W /175 MHz
• Omnigold™ Metalization System
F
S G
C D E
D S
Ø.125 NOM. FULL R J .125
MAXIMUM RATINGS
ID V(BR)DSS VDGR VGS PDISS TJ T STG θ JC
O
I GH
6.0 A 120 V 120 V ± 40 V 115 W @ TC = 25 C -65 C to +200 C -65 OC to +150 OC 1.52 OC/W
O O
DIM A B C D E F G H I J .240 / 6.10 .004 / 0.10 .085 / 2.16 .160 / 4.06 MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64
.230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48
ORDER CODE: ASI1070.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VFT30-28 |
Advanced Semiconductor |
VHF POWER MOSFET | |
2 | VFT300-28 |
Advanced Semiconductor |
VHF POWER MOSFET Silicon N-Channel Enhancement Mode | |
3 | VFT300-50 |
Advanced Semiconductor |
VHF POWER MOSFET N-Channel Enhancement Mode | |
4 | VFT3045BP |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
5 | VFT3045C |
Vishay Siliconix |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
6 | VFT3045CBP |
Vishay |
Trench MOS Barrier Schottky Rectifier Rectifier | |
7 | VFT3060C |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
8 | VFT3060C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
9 | VFT3060G |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
10 | VFT3060G-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
11 | VFT3080C |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier | |
12 | VFT3080C-E3 |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier |