Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
VT3060G-E3, VFT3060G-E3, VBT3060G-E3, VIT3060G-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A TO-220AB TMBS ® ITO-220AB VT3060G 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K VFT3060G 123 PIN 1 PIN 2 PIN 3 TO-262AA K 2 1 VBT3060G PIN 1 K PIN 2 HEATSIN.
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB package)
• Not recommended for PCB bottom side wave mounting
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package)
• Material categorization: for.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | VFT3060G |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 2 | VFT3060C |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |
|
| 3 | VFT3060C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |
|
| 4 | VFT30-28 |
Advanced Semiconductor |
VHF POWER MOSFET |
|
| 5 | VFT30-50 |
Advanced Semiconductor |
VHF POWER MOSFET N-Channel Enhancement Mode |
|
| 6 | VFT300-28 |
Advanced Semiconductor |
VHF POWER MOSFET Silicon N-Channel Enhancement Mode |
|
| 7 | VFT300-50 |
Advanced Semiconductor |
VHF POWER MOSFET N-Channel Enhancement Mode |
|
| 8 | VFT3045BP |
Vishay |
Trench MOS Barrier Schottky Rectifier |
|
| 9 | VFT3045C |
Vishay Siliconix |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 10 | VFT3045CBP |
Vishay |
Trench MOS Barrier Schottky Rectifier Rectifier |
|
| 11 | VFT3080C |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier |
|
| 12 | VFT3080C-E3 |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier |
|