VFT3060G-E3 |
Part Number | VFT3060G-E3 |
Manufacturer | Vishay (https://www.vishay.com/) |
Description | VT3060G-E3, VFT3060G-E3, VBT3060G-E3, VIT3060G-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A TO-220AB TM... |
Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Not recommended for PCB bottom side wave mounting • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) • Material categorization: for... |
Document |
VFT3060G-E3 Data Sheet
PDF 143.16KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VFT3060G |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
2 | VFT3060C |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
3 | VFT3060C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
4 | VFT30-28 |
Advanced Semiconductor |
VHF POWER MOSFET | |
5 | VFT30-50 |
Advanced Semiconductor |
VHF POWER MOSFET N-Channel Enhancement Mode |