VB40M120C - Vishay

VB40M120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

New Product VB40M120C www.vishay.com Vishay General Semiconductor Ultra Low VF = 0.46 V at IF = 5 A FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS ® TO-263AB • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K .

Features

Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS ® TO-263AB
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K
• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 1 VB40M120C PIN 1 PIN 2 K HEATSINK TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 2 x 20 A 120 V 25.