VB40M120C-E3 - Vishay

VB40M120C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

VB40M120C-E3, VB40M120C-M3, VB40M120CHM3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A TMBS ® TO-263AB K 2 1 VB40M120C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Package 2 x 20 A 120 V 250 A 0.64 V 150 °C TO-263AB.

Features

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• AEC-Q101 qualified available - Automotive ordering code: base P/NHM3
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-co.