V40100C-E3, VF40100C, VB40100C-E3, VI40100C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V40100C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VF40100C 123 PIN 1 PIN 2 PIN 3 FEATURES • Trench MOS Schottky technology • Low forward voltage dro.
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package)
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
TO-263AB K
TO-262AA K
TYPICAL APPLICATIONS
For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse batt.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VB40100C |
Vishay Siliconix |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
2 | VB40100C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
3 | VB40100G |
Vishay Siliconix |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
4 | VB40100G-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
5 | VB40120C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
6 | VB40150C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
7 | VB40150C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
8 | VB40170C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
9 | VB408 |
STMicroelectronics |
HIGH VOLTAGE LINEAR REGULATOR POWER I.C. | |
10 | VB408B |
STMicroelectronics |
HIGH VOLTAGE LINEAR REGULATOR POWER I.C. | |
11 | VB408FI |
STMicroelectronics |
HIGH VOLTAGE LINEAR REGULATOR POWER I.C. | |
12 | VB409 |
STMicroelectronics |
HIGH VOLTAGE REGULATOR POWER I.C. |