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VB40M120C |
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| Part Number | VB40M120C |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | New Product VB40M120C www.vishay.com Vishay General Semiconductor Ultra Low VF = 0.46 V at IF = 5 A FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS ® TO-263AB • Trench MOS S... |
| Features |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
TMBS ®
TO-263AB
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 1 VB40M120C PIN 1 PIN 2 K HEATSINK TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 2 x 20 A 120 V 25... |
| Document |
 VB40M120C Data Sheet
PDF 682.15KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | VB40M120C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |
|
| 2 | VB40M120C-M3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |
|
| 3 | VB40M120CHM3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |
|
| 4 | VB40100C |
Vishay Siliconix |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 5 | VB40100C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|