VB40120C - Vishay

VB40120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com V40120C, VF40120C, VB40120C, VI40120C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V40120C PIN 1 3 2 1 PIN 2 PIN 3 CASE VF40120C 123 PIN 1 PIN 2 PIN 3 FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power.

Features

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package)
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D2PAK (TO-263AB) K TO-262AA K 2 1 VB40120C PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS VI40120C PIN 1 3 2 1 PIN 2 PIN 3 K click logo to get started Models Available PRIMARY CHARACTERISTICS.