VB2355 P-Channel 30 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () Typ. 0.046 at VGS = - 10 V - 30 0.049 at VGS = - 6 V 0.054 at VGS = - 4.5 V ID (A)a - 5.6 -5 -4.5 Qg (Typ.) 11.4 nC (SOT-23) S TO-236 FEATURES • TrenchFET® Power MOSFET • 100 % Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Swi.
• TrenchFET® Power MOSFET
• 100 % Rg Tested
APPLICATIONS
• For Mobile Computing
- Load Switch - Notebook Adaptor Switch - DC/DC Converter
G1 S2
3D
Top View
G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
VDS
VGS
TC = 25 °C
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
- 30
± 20 - 5.6 - 5.1 - 5.4b,c - 4.3b,c
Pulsed Drain Current (t = 100 µs) Continous Source-Drain Diode Current
Maximum Power Dissipation
IDM
TC = 25 °C TA = 25 °C
IS
TC = 25 °C
TC =.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VB20100C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
2 | VB20100C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
3 | VB20100S |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
4 | VB20100S-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier | |
5 | VB20100SG |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
6 | VB20120C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
7 | VB20120C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
8 | VB20120C-M3 |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
9 | VB20120S |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
10 | VB20120S-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier | |
11 | VB20120SG |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
12 | VB20120SG-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier |