VB20120S - Vishay

VB20120S High-Voltage Trench MOS Barrier Schottky Rectifier

www.DataSheet.co.kr New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation 2 V20120S PIN 1 PIN 2 CASE 3.

Features

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation 2 V20120S PIN 1 PIN 2 CASE 3 1 VF20120S PIN 1 PIN 2 2 3
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. 1 PIN 3 PIN 3 TO-263AB K K TO-262A.