V20100SG, VF20100SG, VB20100SG, VI20100SG www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20100SG 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K 123 VF20100SG PIN 1 PIN 2 PIN 3 TO-262AA K A NC VB20100SG NC K A HEATSINK VI20100SG 3 2 1 .
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package)
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
MECHANICA.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VB20100S |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
2 | VB20100S-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier | |
3 | VB20100C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
4 | VB20100C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
5 | VB20120C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
6 | VB20120C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
7 | VB20120C-M3 |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
8 | VB20120S |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
9 | VB20120S-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier | |
10 | VB20120SG |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
11 | VB20120SG-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier | |
12 | VB20120SG-M3 |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier |