VB20120C-E3 - Vishay

VB20120C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

V20120C-E3, VF20120C-E3, VB20120C-E3, VI20120C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20120C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VF20120C 123 PIN 1 PIN 2 PIN 3 FEATURES • Trench MOS Schottky technology • Low forward voltage .

Features

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package)
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TO-263AB K TO-262AA K 2 1 VB20120C PIN 1 K PIN 2 HEATSINK VI20120C PIN 1 3 2 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. Packag.