Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
VB2355 |
Click to view a larger image
| Part Number | VB2355 |
| Manufacturer | VBsemi |
| Description | VB2355 P-Channel 30 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () Typ. 0.046 at VGS = - 10 V - 30 0.049 at VGS = - 6 V 0.054 at VGS = - 4.5 V ID (A)a - 5.6 -5 -4.5 Qg (T... |
| Features |
• TrenchFET® Power MOSFET • 100 % Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter G1 S2 3D Top View G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C ID TA = 70 °C - 30 ± 20 - 5.6 - 5.1 - 5.4b,c - 4.3b,c Pulsed Drain Current (t = 100 µs) Continous Source-Drain Diode Current Maximum Power Dissipation IDM TC = 25 °C TA = 25 °C IS TC = 25 °C TC =... |
| Document |
 VB2355 Data Sheet
PDF 250.99KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | VB20100C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 2 | VB20100C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |
|
| 3 | VB20100S |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 4 | VB20100S-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier |
|
| 5 | VB20100SG |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier |
|