VB2290 - VBsemi

VB2290 P-Channel MOSFET

VB2290 P-Channel 20-V (D-S) MOSFET www.VBsemi.com MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.060 at VGS = - 10 V - 4.0 - 20 0.065 at VGS = - 4.5 V - 3.5 0.080 at VGS = - 2.5 V - 2.0 Qg (Typ.) 10 nC TO-236 (SOT-23) G1 S2 3D FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • .

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• Load Switch
• PA Switch
• DC/DC Converters ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Opera.