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VB2290 |
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| Part Number | VB2290 |
| Manufacturer | VBsemi |
| Description | VB2290 P-Channel 20-V (D-S) MOSFET www.VBsemi.com MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.060 at VGS = - 10 V - 4.0 - 20 0.065 at VGS = - 4.5 V - 3.5 0.080 at VGS = - 2.5 V -... |
| Features |
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Opera... |
| Document |
 VB2290 Data Sheet
PDF 253.75KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | VB20100C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 2 | VB20100C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |
|
| 3 | VB20100S |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 4 | VB20100S-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier |
|
| 5 | VB20100SG |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier |
|