VB20M120C-E3, VB20M120C-M3, VB20M120CHM3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A TMBS ® TO-263AB K 2 1 VB20M120C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VRRM IFSM VF at IF = 10 A 120 V 120 A 0.64 V TJ max. 150 °C Package TO.
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
MECHANICAL DATA
Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - Ro.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VB20M120C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
2 | VB20M120C-E3 |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
3 | VB20M120C-M3 |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
4 | VB20100C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
5 | VB20100C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
6 | VB20100S |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
7 | VB20100S-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier | |
8 | VB20100SG |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
9 | VB20120C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
10 | VB20120C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
11 | VB20120C-M3 |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
12 | VB20120S |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier |