New Product VB20M120C www.vishay.com Vishay General Semiconductor Ultra Low VF = 0.55 V at IF = 5 A FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS ® TO-263AB • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K .
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
TMBS ®
TO-263AB
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
2
K
• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
1 VB20M120C
PIN 1 PIN 2 K HEATSINK
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
MECHANICAL DATA PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 10 A TJ max. 2 x 10 A 120 V 12.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VB20M120C-E3 |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
2 | VB20M120C-M3 |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
3 | VB20M120CHM3 |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
4 | VB20100C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
5 | VB20100C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
6 | VB20100S |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
7 | VB20100S-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier | |
8 | VB20100SG |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
9 | VB20120C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
10 | VB20120C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
11 | VB20120C-M3 |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
12 | VB20120S |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier |