V30120CI - Vishay

V30120CI Dual High Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com V30120CI Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 5 A TMBS ® TO-220AB PIN 1 PIN 3 3 2 1 PIN 2 CASE FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per.

Features

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM IFSM 120 V 160 A VF at IF = 15 A (125 °C) 0.66 V TJ max. 150 °C Package TO-220AB Diode variation Common cath.