www.DataSheet.co.kr New Product V30120SG, VF30120SG, VB30120SG, VI30120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-.
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
2 V30120SG
PIN 1 PIN 2 CASE
3 1 VF30120SG
PIN 1 PIN 2
2
3
1
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package)
• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | V30120S |
Vishay Siliconix |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
2 | V30120S |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
3 | V30120C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
4 | V30120C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
5 | V30120CI |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
6 | V30100C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
7 | V30100C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
8 | V30100PW-M3 |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
9 | V30100S |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
10 | V30100S-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier | |
11 | V30100SG |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
12 | V30150C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |