www.DataSheet.co.kr New Product V30100SG, VF30100SG, VB30100SG & VI30100SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance .
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
2 V30100SG
PIN 1 PIN 2 CASE
3 1 VF30100SG
PIN 1 PIN 2
2
3
1
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS
PIN 3
PIN 3
TO-263AB K K
TO-262AA
A NC 1 VB30100SG
NC A K HEATSINK
2
3
For use in high frequency inverters, switching power supplies, freewheeling diod.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | V30100S |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
2 | V30100S-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier | |
3 | V30100C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
4 | V30100C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
5 | V30100PW-M3 |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
6 | V30120C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
7 | V30120C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
8 | V30120CI |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
9 | V30120S |
Vishay Siliconix |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
10 | V30120S |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
11 | V30120SG |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
12 | V30150C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |