www.vishay.com V30120C, VI30120C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TO-220AB TMBS ® TO-262AA K V30120C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VI30120C 3 2 1 PIN 1 PIN 2 PIN 3 K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • Hi.
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM
2 x 15 A 120 V 150 A
VF at IF = 15 A
0.68 V
TJ max. Package
150 °C TO-220AB, TO-262AA
Diode variation
Common cathode
MECHANICAL DATA
Case: TO-22.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | V30120C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
2 | V30120CI |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
3 | V30120S |
Vishay Siliconix |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
4 | V30120S |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
5 | V30120SG |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
6 | V30100C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
7 | V30100C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
8 | V30100PW-M3 |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
9 | V30100S |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
10 | V30100S-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier | |
11 | V30100SG |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
12 | V30150C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |