V30120CI |
Part Number | V30120CI |
Manufacturer | Vishay (https://www.vishay.com/) |
Description | www.vishay.com V30120CI Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 5 A TMBS ® TO-220AB PIN 1 PIN 3 3 2 1 PIN 2 CASE FEATUR... |
Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM IFSM 120 V 160 A VF at IF = 15 A (125 °C) 0.66 V TJ max. 150 °C Package TO-220AB Diode variation Common cath... |
Document |
V30120CI Data Sheet
PDF 130.26KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | V30120C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
2 | V30120C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
3 | V30120S |
Vishay Siliconix |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
4 | V30120S |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
5 | V30120SG |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier |