V20120S - Vishay

V20120S High-Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com V20120S, VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TO-220AB TMBS ® TO-262AA K 3 2 1 V20120S PIN 1 PIN 2 PIN 3 CASE 3 2 1 VI20120S PIN 1 PIN 2 PIN 3 K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High eff.

Features

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 20 A 120 V 200 A VF at IF = 20 A 0.73 V TJ max. Package 150 °C TO-220AB, TO-262AA Diode variation Single MECHANICAL DATA Case: TO-2.