New Product V20120C, VF20120C, VB20120C & VI20120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum.
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package)
• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
1 2 3 VI20120C
2 V20120C
PIN 1 PIN 3 PIN 2 CAS.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | V20120C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
2 | V20120S |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
3 | V20120S-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier | |
4 | V20120SG |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
5 | V20120SG-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier | |
6 | V20100C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
7 | V20100C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
8 | V20100S |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
9 | V20100S-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier | |
10 | V20100SG |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
11 | V20150C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
12 | V20150C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |