www.vishay.com V20120SG, VI20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A TO-220AB TMBS ® TO-262AA K 3 2 1 V20120SG PIN 1 PIN 2 PIN 3 CASE 3 2 1 VI20120SG PIN 1 PIN 2 PIN 3 K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • Hi.
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s,
per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
20 A
VRRM
120 V
IFSM VF at IF = 20 A
150 A 0.78 V
TJ max.
150 °C
Package
TO-220AB, TO-262AA
Diode variation
Single
MECHANICAL DATA
Case: .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | V20120S |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
2 | V20120S-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier | |
3 | V20120SG-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier | |
4 | V20120C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
5 | V20120C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
6 | V20100C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
7 | V20100C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
8 | V20100S |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
9 | V20100S-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier | |
10 | V20100SG |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
11 | V20150C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
12 | V20150C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |