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V20120S |
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| Part Number | V20120S |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | www.vishay.com V20120S, VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TO-220AB TMBS ® TO-262AA K 3 2 1 V20120S PIN ... |
| Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 20 A 120 V 200 A VF at IF = 20 A 0.73 V TJ max. Package 150 °C TO-220AB, TO-262AA Diode variation Single MECHANICAL DATA Case: TO-2... |
| Document |
 V20120S Data Sheet
PDF 138.43KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | V20120C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 2 | V20120C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |
|
| 3 | V20120S-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier |
|
| 4 | V20120SG |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 5 | V20120SG-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier |
|