V20100S - Vishay

V20100S High-Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com V20100S, VI20100S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A TO-220AB TMBS® TO-262AA K V20100S 3 2 1 PIN 1 PIN 2 PIN 3 CASE VI20100S 3 2 1 PIN 1 PIN 2 PIN 3 K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High ef.

Features

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM 100 V IFSM VF at IF = 20 A 250 A 0.69 V TJ max. 150 °C Package TO-220AB, TO-262AA Diode variatio.